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Si7212DN
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
FEATURES
ID (A)
6.8 6.6
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.036 @ VGS = 10 V 0.039 @ VGS = 4.5 V
Qg (Typ)
7
D TrenchFETr Gen II Power MOSFET D 100% Rg Tested D Space Savings Optimized for Fast Switching
RoHS
COMPLIANT
APPLICATIONS
PowerPAKr 1212-8
D Synchronous Rectification D Intermediate Driver
D1 D2
3.30 mm
S1
1 2
G1 S2
3.30 mm
3 4
G2
D1
G1
G2
8 7
D1 D2
6 5
D2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Bottom View Ordering Information: Si7212DN-T1--E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c TA = 25_C TA = 85_C TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "12 6.8 4.9 20 2.2 2.6 1.4
Steady State
Unit
V
4.9 3.5 A
1.1 1.3 0.69 -55 to 150 260
A W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State
Symbol
RthJA RthJC
Typical
38 77 4.3
Maximum
48 94 5.4
Unit
_C/W C/W
Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73128 S-51128--Rev. B, 13-Jun-05 www.vishay.com
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Si7212DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 6.8 A VGS = 4.5 V, ID = 6.6 A VDS = 10 V, ID = 6.8 A IS = 2.2 A, VGS = 0 V 20 0.030 0.032 20 0.8 1.2 0.036 0.039 0.6 1.6 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W f = 1 MHz 1.5 VDS = 15 V, VGS = 4.5 V, ID = 6.8 A 7 2 1.7 3.0 10 12 30 10 15 4.5 15 20 45 15 30 ns W 11 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20 VGS = 10 thru 3 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20
Transfer Characteristics
12
12
8 2V
8 TC = 125_C 4 25_C -55_C
4
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V) www.vishay.com
VGS - Gate-to-Source Voltage (V) Document Number: 73128 S-51128--Rev. B, 13-Jun-05
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Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 r DS(on) - On-Resistance ( W ) 1200 1000 C - Capacitance (pF) VGS = 4.5 V 0.03 VGS = 10 V Ciss 800 600 400 Coss 200 0 0 4 8 12 16 20 0 5 10 15 20 25 30 Crss
Capacitance
0.04
0.02
0.01
0.00
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 6.8 A 8 rDS(on) - On-Resiistance (Normalized) 1.4 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 6.8 A
6
1.2
4
1.0
2
0.8
0 0 3 6 9 12 15 Qg - Total Gate Charge (nC)
0.6 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.10
On-Resistance vs. Gate-to-Source Voltage
0.08 ID = 6.8 A 0.06 ID = 2 A 0.04
TJ = 25_C
0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 73128 S-51128--Rev. B, 13-Jun-05
www.vishay.com
3
Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 50
Single Pulse Power
0.2 V GS(th) Variance (V)
40 ID = 250 mA Power (W) 30
-0.0
-0.2
20
-0.4
10
-0.6 -50
-25
0
25
50
75
100
125
150
0 0.001
0.01
0.1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
100
Safe Operating Area, Junction-To-Ambient
*Limited by rDS(on) IDM Limited
10 I D - Drain Current (A)
1
P(t) = 0.001 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc
0.1
0.01 0.1
VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 77_C/W
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
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Document Number: 73128 S-51128--Rev. B, 13-Jun-05
Si7212DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05
Normalized Effective Transient Thermal Impedance
0.01
10-4
10-3
10-2 Square Wave Pulse Duration (sec)
10-1
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73128. Document Number: 73128 S-51128--Rev. B, 13-Jun-05 www.vishay.com
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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